Your search returned 25 records. Click on the hyperlinks to view further details of Titles..

 

Magazine Name : Ieee Transactions On Electron Devices

Year : 1999 Volume number : 46 Issue: 07

Enhanced Transmission Line Model Structures For Accurate Resistance Evaluation Of Small-Size Contacts And For More Reliable Fabrication (Article)
Subject: Heterojunction Bipolar Transistors , Resistance , Semiconductor Devices , Contacts
Author: Donald Sawdai      Dimitris Pavlidis      Delong Cui     
page:      1302 - 1311
Optimum Design And Fabrication Of Inalas/Ingaas Hemt'S On Gaas With Both High Breakdown Voltage And High Maximum Frequency Of Oscillation (Article)
Subject: Optimum Design , Fabrication Of Welds , Voltage
Author: Katsuhiko Higuchi      Hidetoshi Matsumoto      Tohru Nakamura     
page:      1312 - 1317
Full Band Monte Carlo Simulation Of Zincblende Gan Mesfet'S Including Realistic Impact Ionizaation Rates (Article)
Subject: Gan , Mesfet'S , Monte Carlo Methods
Author: Maziar Farahmand      Kevin F. Brennan     
page:      1319 - 1325
Comparison Gan And 6h-Sic P-I-N Photodetectors With Excellent Ultraviolet Sensitivity And Selecivity (Article)
Subject: Gallium Nitride , Silicon Carbide , Ultraviolet Protection , Wide Bandwidth Cmos Ccii+
Author: John T. Torvik      Jacques I. Pankove      Bart J. Van Zeghbroeck     
page:      1326 - 1331
A 60-Ghz Ft Super Self-Aligned Selectively Grown Sige-Base (Sssb) Bipolar Transistor With Trench Isolation Fabricated On Sol Substrate And Its Application To 20-Gb/S Optical Transmitter Ic'S (Article)
Subject: Optical Fiber Communication , Selective Epitaxial Growth , Sige
Author: Fumihiko Sato      Takasuke Hashimoto      Masaaki Soda     
page:      1332 - 1338
Low-Frequency Noise In Proton Damaged Ldd Mosfet'S (Article)
Subject: Charge Carrier Processes , Charge-Coupled Device (Ccd) Image Sensors , Semiconductor Devices
Author: Timothy Hardy      M. Jamal Deen      R. M. Murowinski     
page:      1339 - 1346
Optimization Of Sige Hbt'S For Operation At High Current Densities (Article)
Subject: Barrier Effects , Bipolar Effects , Sige Hbt
Author: Alvin J. Joseph      John D Cressler      Guofu Niu     
page:      1347 - 1354
Effects Of Flash Eeprom Floating Gate Morphology On Electrical Behavior Fast Programming Bits (Article)
Subject: Flash Eeprom , Gate Geometry , Electrical Drives
Author: F. D. Nkansah      M. Hatalis     
page:      1355 - 1362
An Optimized Rapid Aluminum Back Surface Field Technique For Silicon Solar Cells (Article)
Subject: Aluminum , Back Spots Surface Field , Rapid Thermal Processing
Author: Shankar Narasimhan      A Rohatgi      A. W. Weeber     
page:      1363 - 1370
A New Approach For Characterizing Structure-Dependent Hot-Carrier Effects In Drain-Engineered Mosfet'S (Article)
Subject: Approach , Mosfet , Structure-Properties
Author: S.T. Chung      Jiuun-Jer Yang     
page:      1371 - 1377
An 0.18- Cmos For Mixed Digital And Analog Applications With Zero-Volt-Vth Epitaxial-Channel Mosfet'S (Article)
Subject: Cmos , Epitaxial Si , Voltage
Author: Tatsuya Ohguro      H Naruse      Kenji Katsumata     
page:      1378 - 1383
Analytical Current Voltage Relation For Compact Sige Hbt Models-Part I The "Idealized" Hbt (Article)
Subject: Bipolar Transistor , Compact Modeling , Sige Hbt Heterojunction Bipolar Transistors
Author: Martin Friedrich      Hans-Martin Rein     
page:      1384 - 1393
Analytical Current Voltage Relations Relations For Compact Sige Hbt Models Part Ii Application To Practical Hbt'S And Parameter Extraction (Article)
Subject: Bipolar Transistor , Compact Modeling , Sigec Hbt
Author: Martin Friedrich      Hans-Martin Rein     
page:      1394 - 1401
Novel Offset Gated Poly-Si Tft'S With Subgate (Article)
Subject: High-Frequency Characteristic , Hydrogenation , Offset , Poly-Si Tft
Author: Cheol-Min Park      Byung-Hyuk Min      Min Koo Han     
page:      1402 - 1405
Characteristics Of P-Channel Polysilicon Conductivity Modulated Thin-Film Transistors (Article)
Subject: Conductivity Modulation , Low Temperature , Thin-Film Transistors
Author: Changfang Zhu      Johnny K. O. Sin      W. T. Ng     
page:      1406 - 1410
A Selective-Epitaxial-Growth Shge-Base Base Hbt With Smi Electrodes Featuring 9.3-Ps Ecl-Gate Delay (Article)
Subject: Bipolar Transistor , Emitter Coupled Logic , Heterojunctions
Author: K Washio      Katsuya Oda      Masamichi Tanabe     
page:      1411 - 416
Reverse Current Instabilities In Amorphous Silicon Schottky Diodes Modeling And Experiments (Article)
Subject: Amorphous Silicon , Carrier Transport Efficiency , X-Ray Imaging
Author: Koorosh Aflatooni      Richard Hornsey      Arokia Nathan     
page:      1417 - 1422
On Surface Roughness-Limited Mobility In Highly Doped N-Mosfet'S (Article)
Subject: Based On The Analyses , Surface Roughness
Author: Gianluca Mazzoni      Andrea L Lacaita      Laura M. Perron      Agostino Pirovano     
page:      1423 - 1428
Physically-Based Threshold Voltage Determination For Mosfet'S Of All Gate Lengths (Article)
Subject: Reliability Loss , Voltage Dip
Author: Morikazu Tsuno      Masayasu Tanaka      Masataka Hirose     
page:      1429 - 1434
Deposited Inter-Polysilion Dielectrics For Nonvolatile Memories (Article)
Subject: Charge-To-Breakdown , Interpolated Fir Filter , Surface Roughness
Author: Johan H. Klootwijk      Hans Wallinga      Pierre H. Woerle     
page:      1435 - 1445
Charcterization Of In Version-Layer Capacitance Of Holes In Si Mosfet'S (Article)
Subject: Characterisation , Mosfets
Author: Shin-Ichi Takagi      Mariko Takayanagi      Akira Toriumi     
page:      1446 - 1450
Dc And Transient Chararactrization Of A Compact Schottky Body Contact Technology For Soi Transistors (Article)
Subject: Dc And Rf Device Modeling , Character Projection
Author: Jeffrey W. Sleight      Kaizad R. Mistry     
page:      1451 - 1456
Dependence Of Fermi Level Positions At Gate And Substrate On The Reliability Of Ultrathin Mos Gate Oxides (Article)
Subject: Barrier Height , Ultrathin Sections , Oxide
Author: Tien-Chun Yang      Pinkesh Sachdev      Krishna C. Saraswat     
page:      1457 - 1463
Modeling Study Of Ultrathin Gate Oxides Using Direct Tunneling Current And Capacitance Voltage Measurements In Mos Devices (Article)
Subject: Capacitance , Dielectric Films , Inversion Layers , Oxidation
Author: Nian Yang      W. Kirklen Henson      Jimmie J. Wortman     
page:      1464 - 1471
Exact Treatment Of The Dispersion And Beam Interaction Impedance Of A Thin Tape Helix Surrounded By A Radially Stratified Dielectric (Article)
Subject: Dielectric Loaded Waveguides , Dispersion , Impedance
Author: David Chernin      Thomas M Antonsen      Baruch Levush     
page:      1472 - 1483